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 JMnic
Product Specification
Silicon PNP Power Transistors
2SB1034
DESCRIPTION With TO-126 package Low collector saturation voltage High DC current gain DARLINGTON APPLICATIONS For power amplifier applications
PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base
Absolute maximum ratings(Ta=25ae )
SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Base current (DC) Total power dissipation Junction temperature Storage temperature TC=25ae CONDITIONS Open emitter Open base Open collector VALUE -80 -80 -8 -2 -0.5 15 150 -55~150 ae ae UNIT V V V A A W
JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=-10mA ;IB=0 IC=-1A ;IB=-1mA IC=-1A ;IB=-1mA VCB=-80V; IE=0 VEB=-8V; IC=0 IC=-1A ; VCE=-2V IE=0; VCB=-10V;f=1MHz IC=-0.5A ; VCE=-2V 2000 30 50 MIN -80 TYP.
2SB1034
SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE COB fT
MAX
UNIT V
-1.5 -2.0 -10 -4 |I
V V A mA
pF MHz
Switching times ton ts tf Turn-on time Storage time Fall time RL=30| IB1=IB2=1mA VCC=-30V 0.4 2.0 0.4 |I |I |I s s s
2
JMnic
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB1034
Fig.2 Outline dimensions
3


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